Abstract
The paper is devoted to numerical investigation of the influence of the energy and delay angle of injected carriers on the energy conversion efficiency at the fundamental mode in an n -GaAs Gunn diode with an intricate cathode. An increase in the energy of the carriers injected into the diode’s active region (for the delay angles within a range corresponding to positive values of the diode efficiency) is shown to lead to a shift of this range towards larger angles of lag. A new structure of the Gunn diode is suggested, which involves special cathode contacts consisting of alternating quasiisland ohmic contacts and control electrode domains.
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