Abstract
Publisher Summary This chapter focuses on microwave solid-state devices, such as microwave mixer and detector diodes, microwave varactor diodes, microwave PIN diodes, microwave GUNN diodes, microwave IMPATT diodes, microwave bipolar junction transistors, and microwave field effect transistors. . Microwave mixer and detector diodes are normally metal–semiconductor junction rectifying diodes. The chapter includes their structure, characteristics, fabrication, operation, and models. The chapter also discusses the structure, characteristics, fabrication, operation, and models of microwave varactor diodes. A microwave Gunn diode is a transferred electron device that utilizes the negative differential resistance property, referred to as the transferred electron or Gunn effect. A microwave IMPATT diode is a semiconductor diode that operates with a reverse bias sufficient to cause avalanche breakdown. The IMPATT diode employs the carrier impact ionization and transit-time properties of a semiconductor structure to produce a negative resistance for microwave oscillation and amplification applications.
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