Abstract
Due to its surfactant effect on the III–V epitaxial growth and its isoelectronicity to III–V semiconductors, antimony (Sb) has been investigated extensively for the growth of III–V heteroepitaxy. In the present review, recent progress on the application of Sb during MBE growth of InAs quantum dots (QDs) is discussed. Particular emphasis is placed on the In-rich growth conditions which are relatively less studied. Results on various starting Sb templates have been described for InAs epitaxial growth. Positive effects on increasing the QD density and uniformity are discussed along with the improvement of optical properties and the extension of emission wavelength. It is found that the growth mode of the InAs epitaxy on GaAs (2 × 4) surface can be controlled using Sb as prelayer in addition to the property improvements. Below a certain value of As flux, the InAs growth takes place in the planar growth mode. However, in the case of Sb-induced initial templates Sb (2 × 3), Sb (2 × 4) and Sb (2 × 8), the growth mode changes to the Stranski–Krastanov mode. Some particularities of the growth such as the formation of QDs during cooling down are discussed. It is concluded that the use of Sb during InAs heteroepitaxy can provide a wide range of possibilities in manipulating the structure parameters and optoelectronic properties for new device designs.
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