Abstract
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, cN, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with cN > 1020 at. cm'. The model explaining the hydrostatic pressure induced defect structure changes is proposed. PACS numbers: 65.70.+y
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