Abstract
The 001 oriented Czochralski grown single crystals (Cz-Si) were heavily implanted with hydrogen (dose 2.7 × 1017cm−2, energy 24keV). After implantation, the Cz-Si:H samples were annealed at up to 1270K under hydrostatic argon pressure (HP) up to 11kbar for up to 10h. Structural properties of Cz-Si:H were investigated by high-resolution X-ray diffraction, transmission electron microscopy and photoluminescence (PL) methods.Enhanced HP during annealing of Cz-Si:H results in defect structure changes being dependent on HP, treatment temperature and time. Enhanced creation of small defects/structural disturbances in the surface layers with growing HP has been detected. The effects observed are related to decreased hydrogen out-diffusion under HP promoting the creation of hydrogen-filled microcavities. Density functional theory based calculations show that high concentrations of hydrogen stimulate the formation of microcavites and bubbles. On the other hand, the presence of hydrogen neutralizes the effect of pressure on the creation of vacancies.
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