Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

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The effect of treatment up to 1130 °C under hydrostatic argon pressure up to 1.1 GPa on the structure of silicon implanted with nitrogen, Si:N (nitrogen dose, D=2×10 16 cm −2, ion energy, E=150 keV) was investigated by TEM, photoluminescence (PL) and other methods. The high-temperature pressure treatment produces typically strongly disturbed buried nitrogen-containing layers. The Fz-Si:N samples treated at 450 °C—HP indicate the PL peaks at about 0.81 eV (the dislocation-related D1 peak) with the intensity increasing with HP (no PL at 0.81 eV was detected for the sample treated under 0.01 GPa), and at about 0.93 eV (the dislocation-related D3 peak). The Fz-Si:N sample treated at higher temperature (650 °C) and under the highest pressure (1.1 GPa) indicates the presence of PL only at about 0.87 eV (the D2 dislocation-related line). Our investigations help in understanding the mechanisms of creation of buried insulating layers in nitrogen-implanted silicon.