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Abstract
A study of the defect structure of Al x Ga 1− x As/GaAs layers with varied primary strain state prepared by LPE method and subsequently annealed under high uniform pressure is reported. An influence of high hydrostatic pressure–high temperature (1.2 GPa and 920 K or 1070 K applied for 1 h) on the strain state and defect structure of the layers was investigated by high-resolution X-ray diffractometry and topography (the latter done at the ID19 beamline, ESRF). A treatment-induced change of defect structure was detected for all samples, being more pronounced for the case of treatment at 1070 K. The appearance of treatment-induced stresses at the precipitate/matrix boundary caused the creation of new defects and resulted in an increase of rocking curve width and in enhancement of the diffuse scattering intensity.
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