Abstract
Ta-A1 metal alloy is used as the important material for imaging system. The alloy keeps a constant resistance while A1-Si metal alloy shows a linear variation with a temperature. It is simply considered because of the interaction between the refractoriness of Ta and the high conductivity of A1.Reactive ion etching(RIE) of Ta-A1 alloy thin film with the thickness of 1000 A was studied. It was confirmed that CF4 gas could be effectively used to etch the Ta-A1 alloy thin film. The etching rate of the thin film which the molar ratio is 1:1 is about 67 A/min. The etching rate of the SiO2 layer was 12 times faster than that of the Ta-A1 alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-27 in RIE with the CF4 gas.
Published Version
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