Abstract
The authors have demonstrated the novel CdTe x-ray imaging device that consists of a Schottky CdTe diode and a 12×12 matrix-structured field emitter array (FEA). The Schottky CdTe diode was fabricated by depositing In on a Cl-doped p-type (π-type) CdTe substrate and Sb2S3 on the opposite side of the CdTe substrate. The matrix-structured FEA was fabricated by reactive ion etching and etch-back method. The output current was successfully detected by the recombination of holes with electrons from the FEA, and clearly depended on the x-ray intensity.
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