Abstract
The authors develop a step-and-align interference lithography system to fabricate large-area periodic submicron structures by stitching the unit exposure area step-by-step. A metal mask with a square transparent window in the center is used to intercept the quasi-flat-top region of the expanded Gaussian beam, and thus it serves as a beamshaper to approximate the ideal unit beam that has uniform intensity and spatial coherence. Two-dimensional precision dual-actuator motion stages could provide travel distance for full wafer exposure with 2nm high precision positioning capability for stitching the submicron patterns. The gratings with period of 700nm are successfully stitched along two directions on 100mm diameter wafers.
Published Version
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