Abstract
The small signal behavior of semiconductors under hot electron conditions is modeled as that of a casual, linear, time-invariant system with the small signal mobility as the system transfer function. Using linear system analysis techniques the small signal velocity overshoot is calculated from the mobility thereby establishing a close link between velocity autocorrelation and overshoot. The effect on the transients due to finite collision duration, which can be important in small geometry and high speed semiconductor devices, is demonstrated. This technique allows us to calculate a number of hot electron properties without carrying out involved Monte Carlo computations. Some numerical results for silicon are given as an example.
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