Calculation of avalanche breakdown voltage and depletion layer thickness in a P− N junction with a double error function doping profile

Abstract

We have calculated the avalanche breakdown voltage and the extent of the depletion region for a pn-junction with a double error function doping profile which could be useful in the design of high voltage thyristors. The results are presented as a set of curves corresponding to various surface concentrations and depths of the two diffusions. The parameter range covered is as follows: surface concentrations: first diffusion 10 18–10 20 cm −3, and second diffusion 2 × 10 15–10 17 cm −3; diffusion depths: first diffusion 60–100 μm, and second diffusion 40–160 μm; background doping density: 10 13–10 14 cm −3.