Abstract
In the InSb film fabricated by thermal evaporation on the CdS single crystal, growth of reflection in the infrared region similar to plasma resonance in the single crystals has observed. Raman spectra demonstrate that the ratio of amorphous and crystalline phases is approximately constant for InSb films on the CdS substrate, which is not typical for the InSb film on gallium gadolinium garnet. The current – voltage characteristics of the InSb film on CdS as well as the annealed layer of InSb (core)–CdS (shell) quantum dots are linear and become sensitive to illumination.
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