Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers

Abstract

We report the fabrication and comparison of buried heterostructure and ridge waveguide 0.98 μm lasers with strained InGaAs quantum wells, stepped InGaAsP confinement layers, and InGaP claddings. The buried heterostructure (BH) lasers exhibit superior performance with lower threshold and higher power. We demonstrate a BH laser with 4.4 mA threshold current, 77% differential quantum efficiency, 196 mW of output power, and 150 K characteristic temperature. No catastrophic optical damage is observed on the laser facets, although the facets were not coated or treated.