Abstract
We have investigated the quantum Hall effect breakdown (QHE) by using samples whose confinement potential at the sample boundary is tunable by using side gate structure. The Hall bar shaped samples are made of two types of the GaAs/AlGaAs heterostructure wafers, where the QHE breakdown current is linear or sub-linear to the sample width. In both linear and sub-linear type of samples, the value of breakdown current is scarcely affected by changing the side gate voltage, which suggests that the QHE breakdown is almost independent of the confinement potential at the 2DEG edge. We have measured the QHE breakdown with Corbino shaped samples. The critical voltage in the sub-linear type sample is much smaller (<3 kV/ m) than those in the linear type samples (≈10 kV/ m) , and the width dependence of critical voltage shows nonlinear feature. The origin of the sub-linear type QHE breakdown is not ‘edge effect’ but the properties of bulk two-dimensional electron system.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
