Abstract
Inverted structure perovskite solar cells have attracted much attention in recent years due to their reliable operational stability, low residual, and low-temperature fabrication process. In the past few years, to accelerate their commercialization, the focus of research on the inverted structure perovskite solar cells was on the power conversion efficiency increasing. In this study nanoparticles of Cu2ZnSnS4 (CZTS) were doped into the PEDOT:PSS film as the hole transport layer (HTL) and then the interface carrier recombination quenching was observed. Consequently, it leads the s to charge carrier's collection enhancement of the Inverted perovskite solar cells. Compared to other types of HTLs, the use of CZTS HTL reduces the amount of interaction of the HTL film and the perovskite film, which results in an increment of the stability of the solar cell over time.
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