Boron-oxygen defect imaging in p-type Czochralski silicon

Abstract

In this work, we demonstrate an accurate method for determining the effective boron-oxygen (BO) related defect density on Czochralski-grown silicon wafers using photoluminescence imaging. Furthermore, by combining a recently developed dopant density imaging technique and microscopic Fourier transform infrared spectroscopy measurements of the local interstitial oxygen concentration [Oi], the BO-related defect density, [Oi], and the boron dopant density from the same wafer were determined, all with a spatial resolution of 160 μm. The results clearly confirm the established dependencies of the BO-related defect density on [Oi] and the boron dopant density and demonstrate a powerful technique for studying this important defect.