Abstract
CdTe and CdZnTe (Cd1–xZnxTe) in bulk crystal form are used as X-ray and gamma-ray detectors, in electrooptic and photorefractive devices and as substrates for epitaxy, especially epitaxial HgCdTe for infrared detector arrays. Cd1–xZnxTe crystals for composition of the order of 10–20 atomic percentage have become one of the most studied material for gamma-ray detection application and also spectroscopic X-ray imaging. Substitution of manganese for part of the cadmium in CdTe matrix produces one of the most widely studied diluted (semimagnetic) semiconductors. Apart from magnetic properties, CdMnTe compound is also considered as material for X-ray and gamma-ray detectors. Large crystals of all these compositions are commonly produced by various versions of growth from the melt.
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