Abstract
There are different approaches and also materials to construct a detector for x-rays. the available semiconductor materials, Silicon (Si) is mainly used for charged particle detectors and soft X-ray detectors. Cadmium Telluride (CdTe) compound semiconductors for x-ray detectors have experienced a rather rapid development in the last few years, due to their appealing performance. In this paper we review the physical properties of semiconductor detectors for x-ray. In particular, we focus on compound semiconductor detectors. In addition, Si detector has better energy resolution achievement. However, it does not have good detection efficiency for higher energy above (40Kev). While CdTe detector supplies higher detection efficiency for x -rays about 100% for up to 100 keV in energy. The response functions of Si detector to reduce small x-ray, which has limited sensitivity for energy about 30keV. The XR-100T is high performance for x-ray and gamma ray detector by using 241Am (59.5keV), so the cooler are mounted the input FET a feedback components to the Amptek to charge sensitive preamplifier. Both the Si and CdTe detectors are connected to the PX2 combined amplifier and power supply, that was provide the voltage needed to operate XR-100T CdTe. The PX2 T CdTe amplifier has a Rise Time Discrimination circuit, measure the FWHM energy resolution of 55Fe (5.89) the peak in each spectrum hence a graph of energy resolution. Moreover, the Rise Time Discrimination So the escape peak of 55Fe was determined with Si detector was 11.66 keV, also k- sell x-ray energy was calculated to 5.77keV and the Rise Time Discrimination effect was studied on the spectrum when is it switched on and off. Its influence was found in decreasing the noise of the spectrum.
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