Abstract
In this paper, the effect of structural characteristic of nanosheet field effect transistor(NSFET) on BTI is analyzed, and the study is extended to inverters and 6T-SRAM cell. The NSFET structure and the inverter and SRAM cell based on NSFET structure were constructed by using TCAD. The effect of BTI on NSFET was simulated by using reaction-diffusion (RD) trap degradation model, and the relationship between the structural characteristics of NSFET and the characteristics of BTI was studied. The results show that under the same applied stress condition, the BTI effect is more affected in the corner part of NSFET than in the plane part, and the effect of BTI effect is weakened by the increase of the width of the nanosheet structure. In addition, NSFET of wide nanosheets can more effectively inhibit BTI in the circuit and weaken the deviation of butterfly curve of SRAM cell caused by BTI effect. Therefore, for circuit design based on NSFET structure, appropriate adjustment of chip width can alleviate the aging problem caused by BTI effect.
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