Abstract
Bi1–x–yTixSiyOz (BTSO) thin films were grown on eight inch diameter Ru/SiO2/Si or bare Si wafers by atomic layer deposition (ALD) method using Bi(mmp)3, Ti(mmp)4, and Si(OEt)4 [mmp = 1-methoxy-2-methyl-2-propoxide (OCMe2CH2OMe, Me = methyl); Et = ethyl] as metal alkoxide precursors and ozone (O3) as the oxidant gas. Transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) analysis showed that the as-deposited films are amorphous and the cation compositional ratio of Bi:Ti:Si is 0.38:0.37:0.25 of films deposited at 325 °C on Ru/SiO2/Si Ru substrates. X-ray photoelectron spectroscopy (XPS) shows that the BTSO films are homogeneously dispersed without any phase-separation of the components. The BTSO films show excellent step coverage on a high aspect ratio (4) contact hole structure with a diameter of 300 nm. The leakage current density of BTSO films is on the order of 10–8 A cm–2 at 1 V, meeting present dielectric requirements for a dynamic random access memory storage capacitor with an equivalent oxide thickness of 2.1 nm. From the capacitance–voltage characteristics at 10 kHz of the Pt/BTSO/Ru capacitor, the estimated dielectric constant of amorphous BTSO films is ∼ 24.
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