Abstract

Patterning of highaspect ratio contact holes is required for 0. 5/ira technologies. High selectivity and anisotropic wall profiles are necessary for a successful process since large percentage overetches are required for planarized dielectric layers. This paper will discuss work in patterning high aspect ratio contact hole patterns using a Drytek 384T TRIODE etching system. The etching of O. 6/nn by l/nn and O. 6jnn by 2/sm contact hole structures has been investigated. Discussion of process variables which control anisotropic wall profiles will be presented.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.