Abstract
An etching of a SiO2 contact hole with a diameter of 0.19μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23% lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10–12% higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.
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