Abstract
In this work, we propose a novel hetero-junction hetero-gate-dielectric gate over source-channel overlap dual-gate TFET with an insulator pocket and a lateral source contact (IP-LSC-HJ-HGD-GoSo-DGTFET). In the IP-LSC-HJ-HGD-GoSo-DGTFET, an insulator pocket placed between channel and the right side of source is adopted to suppress the source corner effect which can cause SS to deteriorate. Therefore, an ultra-steep SSAVER of 5.5 mV/dec is obtained within 10 orders of magnitude of IDS. Moreover, IOFF is improved by one order of magnitude when the vertical source contact is replaced by a lateral source contact. Finally, the ION, ION/IOFF, VONSET, and gm of IP-LSC-HJ-HGD-GoSo-DGTFET are 97 μA/μm, 2.8 × 1013, 0 V and 510 μS/μm through the optimization of DC performance, respectively. As for the analog/RF performance, IP-LSC-HJ-HGD-GoSo-DGTFET achieves ƒT of 39 GHz and GBP of 17.3 GHz, respectively. Compared with other GoSo-DGTFETs, the proposed IP-LSC-HJ-HGD-GoSo-DGTFET is a better potential candidate in the application field of ultra-low power integrated circuit.
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