BaTiO3 on LaNiO3 and Si thin films prepared by mist plasma evaporation

Abstract

Conductive LaNiO3 thin films were prepared on Si substrate by mist plasma evaporation and were used as bottom electrodes for BaTiO3 thin films. The structure and electrical properties of BaTiO3 thin films deposited on the metallic LaNiO3 and Pt electrodes were comparatively investigated. The structure of BaTiO3 film on LaNiO3/Si substrate was pseudocubic due to the lattice-matching growth, while the perovskite structure of the film on Pt/Ti/Si substrate was tetragonal. The dielectric constant of BaTiO3 films with LaNiO3 electrode was 167 at 100kHz, and was smaller than that grown on the Pt electrode.