Abstract
We have carried out barrier-height imaging on clean Si(001) 2 ×1 and Ni-contaminated 2 ×n surfaces and investigated the local barrier-height variation at and around Ni-related dimer-vacancy (DV) defects which are referred to as (1+2)-DVs. The barrier-height images show atomic contrast which conforms nicely with corresponding constant-current scanning-tunneling-microscopy (STM) topographs. No strong defect-induced modification was observed in the local barrier height at (1+2)-DV. Our direct barrier-height measurements thus provide a negative result on the barrier-height reduction at (1+2)-DV, which was predicted by Ukraintsev et al. [Surf. Sci. 388 (1997) 132)].
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