Abstract
We have carried out scanning tunneling microscopy (STM) and barrier-height (BH) imaging of Ba adsorbed Si(111) 7×7. In the initial stage of Ba-adsorption, we observed several types of adsorbed features. The barrier-height imaging shows that the tunneling barrier decreases by approximately -2 eV at these sites. The most abundant adsorption features are bright spots preferentially observed on the faulted half of the 7×7 unit cell. They are imaged as Ba trimers in filled-state images but appear as single Ba atoms in empty-state images. We also carried out BH imaging of the Ba/Si(111)3×1 structure coexisting with the 7×7 phase and directly determined the BH difference between two phases. The reduction in BH on the 3×1 structure, relative to that of the 7×7 structure, is ∼ - 2.2 eV.
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