Abstract
The local tunneling barrier height at and around subsurface Zn acceptor atoms on GaAs(110) has been investigated by scanning tunneling microscopy (STM) and local barrier height (LBH) imaging. The measured LBH showed the bias dependence, which was in good agreement with the theoretical simulation that takes into account the effect of tip-induced band bending (TIBB). Above the acceptor sites, the bias dependence of LBH shifted to the positive-bias side as compared with that of the area distant from acceptors. We explained the observed shift by the additional local band bending that is induced by ionized acceptors.
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