Abstract
We observed local tunneling barrier height images on reconstructed Si(111) surfaces. Local tunneling barrier height on √3×√3 reconstructed structure was almost the same as that of 7×7 structure. In contrast, local tunneling barrier height on the c(4×2) reconstructed structure was lower than that on the 7×7 structure. Both reconstructed structures were induced by transition metal atom adsorption. This is influence of three-dimensional spatial distribution of surface wave function. We also found that local tunneling barrier height on the ring cluster structure was lower than that on 7×7 structure.
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