Abstract
We demonstrate enhanced band-gap tunability in Cd1−xZnxTe thin films (x=0, 0.03, 0.06, 0.1, 0.2, or 1) fabricated directly from Cd1−xZnxTe targets using pulsed laser deposition (PLD). All the Cd1−xZnxTe films have uniform thicknesses of ~200nm, crystalline sizes of ~20nm, and are highly oriented in the [111] direction. The annealed Cd1−xZnxTe targets allow better compositional control of the Cd1−xZnxTe films than non-annealed targets. This new process using a single target with high compositional uniformity provides better tunability of the Cd1−xZnxTe film lattice parameter (6.49 to 6.09Å) and band gap (1.48 to 2.22eV) by increasing the Zn concentration (x) from 0 to 1.
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