Abstract
The intensity-dependent photoconductive response to 2.06 μm excitation has been used to determine Shockley-Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85Sb0.15-InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split-off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K.
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