Abstract
We employ self-consistently coupled opto-electrical simulations to explore the design strategy for a proposed electrically pumped metallic coaxial ring cavity nanolaser. With the optical cavity optimized to the physical size of 1.4(λ/n)3, the lasing ability using two gain medium schemes, bulk InGaAs and InGaAs/InP multiple quantum wells (MQWs), are compared. It is shown that the device with the bulk gain medium lases at 1568 nm, while the gain fails to overcome the optical loss in the case of the MQW gain medium due to its lower modal confinement ratio. Variations in material parameters like carrier mobility and Auger coefficient in the bulk laser or carrier capture time in the MQW laser are found to hardly change the lasing ability, although they do impact lasing threshold and efficiency in the bulk case. To study the possibility of further device down-scaling, the lasing feasibility of a smaller cavity with a size of 0.23(λ/n)3 is investigated. We demonstrate that neither including the Purcell effect nor using a metallic substrate for better mode confinement improves the lasing behavior.
Highlights
Implementing highly integrated optical interconnect systems for chip-to-chip or board-to-board communication is believed to fulfill the increasing demand of high-speed data transfer with high throughput.1 the miniaturization of one of the key components, i.e., laser sources, is restricted by the fundamental diffraction limit
The faster carrier capture process results in a bit higher modal gain, 0.381/ps compared with the original 0.313/ps at 3 V listed in Table I, it is still far from sufficient to compensate the reduction of modal gain caused by the low confinement ratio of the multiple quantum wells (MQWs) laser
We theoretically demonstrated the lasing ability of a coaxial ring nanolaser with a bulk InGaAs gain medium at room temperature using electrical pumping
Summary
Implementing highly integrated optical interconnect systems for chip-to-chip or board-to-board communication is believed to fulfill the increasing demand of high-speed data transfer with high throughput. the miniaturization of one of the key components, i.e., laser sources, is restricted by the fundamental diffraction limit. The obtained mode profile pattern together with the corresponding modal parameters serve as the input to solve the electrical problem using the laser module of Sentaurus Device.12 In this simulator, the quantum well (QW) is modeled as the recombination center in the frame of the drift-diffusion formalism follows the treatment mentioned by Grupen and Hess, and the net characteristic capture time is set to 4 ps for both electrons and holes.. The temperature dependence of the Auger recombination coefficient in the bulk gain medium is calculated according to Ref. 26, where it slightly increases from 10−31 cm6/s (1.25 × 10−29 cm6/s) at 300K to 1.51 × 10−31 cm6/s (1.87 × 10−29 cm6/s) at 400 K and 1.91 × 10−31 cm6/s (2.83 × 10−29 cm6/s) at 500 K for electrons (holes).
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