Atomistic modeling of coupled electron-phonon transport in nanowire transistors

Abstract

Self-heating effects are investigated in ultrascaled gate-all-around silicon nanowire field-effect transistors (NWFETs) using a full-band and atomistic quantum transport simulator where electron and phonon transport are fully coupled. The nonequilibrium Green's function formalism is used for that purpose, within a nearest-neighbor $s{p}^{3}{d}^{5}{s}^{*}$ tight-binding basis for electrons and a modified valence-force-field model for phonons. Electron-phonon and phonon-electron interactions are taken into account through specific scattering self-energies treated in the self-consistent Born approximation. The electron and phonon systems are driven out of equilibrium; energy is exchanged between them while the total energy current remains conserved. This gives rise to local variations of the lattice temperature and the formation of hot spots. The resulting self-heating effects strongly increase the electron-phonon scattering strength and lead to a significant reduction of the ON-current in the considered ultrascaled Si NWFET with a diameter of 3 nm and a length of 45 nm. At the same time, the lattice temperature exhibits a maximum close to the drain contact of the transistor.