Abstract
AbstractTitanium disulfide thin films are grown by atomic layer deposition (ALD) at 400–500 °C using TiCl4 and H2S as precursors. Soda‐lime glass, silicon, and thin films of TiN, ZnS, Rh, Ir, Pd, Pt, and Ru are used as substrates. Hexagonal (001)‐oriented TiS2 is deposited on ZnS at 400 °C with growth rates of between 0.15 and 0.20 Å per cycle. Randomly oriented, hexagonal, platelike crystals are deposited on glass and TiN with a growth rate of 0.26 Å per cycle. Significant variations in surface morphologies were detected in TiS2 films on various noble metals. TiS2 was also grown on the pore walls of an alumina membrane.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.