Abstract
We have investigated the AsH3 and GeH4 flow rate dependences of As concentration and growth rate for atmospheric in situ As-doped SiGe selective epitaxial growth. A high As concentration of 3.2×1019 atoms/cm3 and a high growth rate of 13 nm/min were achieved for Si0.79Ge0.21 selective epitaxial growth. The good selectivity was confirmed, and the epitaxial film showed high crystalline quality, a smooth surface and an abrupt change in the dopant profile at the interface. These results were interpreted in terms of the suppression of As surface segregation and the enhancement of As diffusion due to Ge incorporation in Si growth.
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