Abstract
We investigated the characteristics of in situ As-doped Si1−yCy selective epitaxial growth (SEG) under atmospheric pressure. We succeeded in obtaining an in situ doped Si1−yCy SEG film with a high As concentration of 2.6×1019atoms∕cm3. The film exhibited a high crystalline quality, high strain, constant As and C concentration profiles, and an abrupt change in the dopant profile at the interface. It was found that the increase in As concentration under atmospheric pressure increases the C concentration and the growth rate by competitive surface segregation between As and C atoms, leading to a highly strained Si1−yCy SEG film with a low resistivity.
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