Abstract
The characteristics of in-situ P-doped Si selective epitaxial growth (SEG) under atmospheric pressure (AP) was investigated and compared with in-situ As-doped SEG under AP. Dopant concentrations and growth rates of films grown at AP are higher than those at low pressure, this for both dopants. This was interpreted as effects of surface segregation of the dopant atoms and the strong etching effect of HCl during the SEG under AP. By optimizing the growth rate and temperature, we achieved a high dopant concentration of 7.3×10 19 atoms/cm 3 and a high growth rate for the P-doped SEG.
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