Selective Epitaxial Growth of Si(Ge) for High Performance MOSFET Applications

Abstract

Selective epitaxial growth of Si and SiGe films has been applied to the fabrication of many high-performance MOSFETs, because new device structures can be realized by selective epitaxial growth. Selective growth of Si(Ge) at the source/drain region is the most well-known example. Precise control of the selective epitaxial process enables the best performance with the desired structure. Control of the selectivity is also important for a robust manufacturing process. Selective epitaxial growth is essential for next-generation MOSFETs, such as FinFETs. Innovation of selective epitaxial growth will spur the continuous progress of MOSFETs.