Selective Epitaxy of Si and SiGe for Future MOS Devices

Abstract

Selective epitaxial growth of Si and SiGe films has been applied to the fabrication of many high-performance MOSFETs, because new device structures can be realized by selective epitaxial growth. Selective growth of Si and SiGe at the source/drain region is the most well-known example. Selective growth on S/D region is especially important for FinFETs, which is one of the most promising candidate for future MOS devices. By using selective epitaxy of Si:C, precise device design can be realized. Multi-stacked structure, which is also a candidate for next-generation devices, can be fabricated with SiGe epitaxial growth.