Abstract
Quantitive assessment of the composition profiles of Ga1-xA1xAs-GaAs heterostructures, which usually relies on Auger or secondary-ion mass spectroscopy profiling techniques, can be gained by numerical analysis of in situ ellipsometry measurements. An inversion procedure that allows the computation of the refractive index profile from the ellipsometric angles measured during growth has been developed and applied to the assessment of a GaAs→ Ga1-xA1xAs-GaAs transition obtained in a metalorganic vapor phase epitaxy reactor.
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