Abstract
The temperature field in the metalorganic vapor phase epitaxy (MOVPE) reactor heated by induction is investigated, by using the numerical simulation. A novel susceptor composed of two materials is proposed. Compared to the conventional susceptor, the new susceptor can change the rates of the heat transfer, and improve the uniformity of the temperature distribution in the wafer. This susceptor for heating the wafer of eight inches in diameter is optimized by using the finite element method (FEM). It is found that the optimized susceptor makes the uniformity of the temperature distribution in the wafer improve more than 84.7%, which may be of great benefit to the film growth.
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