Abstract
A dual-fluid layer structure metalorganic vapor phase epitaxy (MOVPE) reactor has been developed, which was designed by numerical fluid simulation. This reactor is able to control group III and group V uniformities independently. As a result, highly uniform InGaAsP growth in thickness and composition was obtained without substrate rotation. Atmospheric pressure growth produces a flat concentration boundary layer of group III materials and concentration profile adjustment of the group V materials on the substrate. The resultant InGaAs/InP layer on a substrate of 2 inches in diameter had a thickness that deviated by less than 1.7% (standard deviation). The composition of the InGaAsP layer was so uniform that the standard deviation in the photoluminescence peak wavelength was less than 4.2 nm over an area of 40 mm in diameter.
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