Abstract
In this paper, we present the application of photobleachable positive deep-UV resist and contrast enhancement material (CEM) to KrF excimer laser lithography. The effects of the photobleaching characteristics of the resist and CEM on the resist pattern angles and profiles were examined and optimization of these materials was performed. High-aspect-ratio 0.5 µm-line-and-space patterns were successfully obtained by optimization of the materials. PROLITH (positive resist optical lithography model) has excellently reproduced actual pattern profiles.
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