Abstract
The applications of a contrast enhancement material, which is composed of 5‐diazo‐meldrum’s acid as a photobleachable reagent, poly(styrene‐co‐maleic acid half‐isopropylate) as a matrix resin, and diethylene glycol dimethyl ether as a solvent, to a photobleachable deep UV resist are presented. The contrast enhancement material with high‐contrast capability was very effective on such a resist, and high‐aspect‐ratio patterns of the resist were successfully obtained. The material characterizations of the contrast enhancement material have been also demonstrated using positive resist optical lithography model (PROLITH).
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