Characterization of diazonaphthoquinone–novolac resin-type positive photoresist for g-line and i-line exposure using water-soluble contrast enhancement materials

Abstract

We describe the characterization of conventional diazonaphthoguinone–novolac resin‐type positive photoresist for g‐line (436‐nm) and i‐line (365‐nm) exposure using water‐soluble contrast enhancement materials. In the experiments, the Rayleigh’s theoretical resolution and contrast enhancement capability of the water‐soluble contrast enhancement materials were set to be equal between the each wavelength exposure. As a result, the pattern profiles of the resist were better, however, the latitude of depth of focus was worse for g‐line exposure than for i‐line exposure. Mask linearity had no difference between them. It was found that the improvement of the pattern profiles for i‐line exposure was achieved by using a higher photobleachable photoresist at i‐line.