Abstract
Anomalous photocurrent was observed in an epitaxial Fe∕Zn0. 96Fe0. 04S Schottky diode grown by molecular beam epitaxy. The temperature dependent decay behavior of the anomalous photocurrent has been studied. A model based on the photoionization of the acceptorlike interface states is proposed to explain this anomalous phenomenon. By fitting the decay curves of the anomalous photocurrent at different temperatures, ionization energy of the interface states is obtained from an Arrhenius plot of the decay time constants. We believe that these interface states are associated with some complex (Fe, S) defects formed at the Fe∕ZnFeS interface.
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