Abstract
In this paper, the effects of interface states in ZnO/CdS/CuInSe/sub 2/ and CdS/CdTe solar cells are presented. The effects are investigated through numerical modeling using the ADEPT (A Device Emulation Program and Tool) software package. The results show that donor-like interface states have very little effect, but acceptor-like interface states at the resistive ZnO/CdS can cause pinning of the bands at the interface, thus leading to nonexponential illuminated I-V curves when the interface state densities are high enough. High density of acceptor-like states between the CdS and In-rich CIS does not result in the two-diode like IV curves. Instead they can significantly lower the fill factor. In the CdS/CdTe solar cells, either donor- or acceptor-like interface states have little effect since almost all the depletion region lies in the CdTe. Thus, the metallurgical junction where the interface states are located is away from the electrical junction where the conductivity type changes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
