Abstract
Fe/Zn 0.96 Fe 0.04 S Schottky diode was grown by molecular beam epitaxy. The short-circuit DC photocurrent spectroscopy was measured at temperatures from 10 to 300 K. Anomalous photocurrent was observed at temperatures above 100 K when excitation photon energies were less than the band gap energy of Zn 0.96 Fe 0.04 S. We have explained this anomalous phenomenon based on the photo-ionization of acceptor-like interface states. We believe that these interface states are associated with some complex (Fe,S) defects formed at the Fe/ZnFeS interface. The transient behavior of photocurrent at various temperatures has also been studied.
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