Abstract
A simple analytical threshold voltage model for lightly doped tri-gate MOSFETs has been developed, using the superposition of the threshold voltages of a symmetric and an asymmetric double-gate MOSFET. The model has been verified by comparison with experimental and simulation results of tri-gate FinFETs with various fin widths and channel lengths. Excellent agreement between model, experimental and simulation results is obtained, demonstrating the validity of the proposed threshold voltage model.
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