Abstract
For a symmetrical DG MOSFET with two different gate-metals with two work functions, ?m1 and ?m2, a threshold voltage model is derived and presented for different L1/L2 ratios. The solid lines correspond to the model results and the symbols to the simulation results. An analytical threshold voltage model in undoped short-channel DG MOSFETs with asymmetrical dual gate material is presented. The threshold voltage model is derived based on an analytical solution for the potential distribution along the channel in the subthreshold region. For verification of the model, the potential distribution along the channel length and the threshold voltage are compared with simulation results for a wide range of the device dimensions.
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